Rad-Hard-GaN封装分立器件
Rad-Hard-GaN封装分立器件
陶瓷适配器上的Rad-Hard-GaN芯片
陶瓷适配器上的Rad-Hard-GaN芯片
Rad-Hard-GaN驱动器和功率级
Rad-Hard-GaN驱动器和功率级
演示板
演示板
Rad-Hard-GaN驱动器和功率级

EPC Space Rad-Hard-GaN驱动器经过优化,可在关键的星载系统中驱动Rad-Hard-GaN晶体管。Rad-Hard功率级集成了带电源开关的高速门驱动电路,以在小型封装中提供完整的功率级。这些设备是高速DC-DC转换、同步整流和多相电机驱动的理想选择。


自2019年1月以来,数千个EPC Space抗辐照型GaN器件已进入轨道。


产品型号描述产品封装 (mm)
FBS-GAM01P-C-PSESingle Output High-Speed eGaN® HEMT Gate Driver Development Module12.7 x 9.5
FBS-GAM01P-R-PSERadiation-Hardened Single Output High-Speed eGaN® HEMT Gate Driver Module12.7 x 9.5
FBS-GAM02P-C-PSE50 V Multifunction Power eGaN® HEMT Gate Driver Development Module25 x 19
FBS-GAM02P-R-PSE50 V Radiation-Hardened Multifunction Power eGaN® HEMT Gate Driver Driver Module25 x 19
FBS-GAM01-P-C5050 V/12 A Single Low-Side Power Driver Development Module19 x 9.7
FBS-GAM01-P-R5050 V/12 A Radiation-Hardened Single Low-Side Power Driver Module19 x 9.7
FBS-GAM01-P-C100100 V/12 A Single Low-Side Power Driver Development Module19 x 9.7
FBS-GAM01-P-R100100 V/12 A Radiation-Hardened Single Low-Side Power Driver Module19 x 9.7
FBS-GAM02-P-C5050 V/ 10 A Multifunction Power Development Module25 x 19
FBS-GAM02-P-R5050 V/10 A Radiation-Hardened Multifunction Power Module25 x 19
FBS-GAM04-P-C5050 V/10 A Dual Low-Side Power Driver Development Module25 x 19
FBS-GAM04-P-C100100 V/10 A Dual Low-Side Power Driver Development Module25 x 19



  • 集成 UVLO/电源良好检测和报告电路

  • 电源良好/(低真)关断双向 I/O 功能

  • 兼容逻辑输入

  • SMT 封装,带独特的“柱式”I/O 焊盘

  • “Gan-Driving-GaN”技术

  • 高速


  • 符合EPC Space严格的认证要求

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