Rad-Hard-GaN驱动器和功率级-上海一鉴天电子有限公司

Rad-Hard-GaN驱动器和功率级

EPC Space Rad-Hard-GaN驱动器经过优化，可在关键的星载系统中驱动Rad-Hard-GaN晶体管。Rad-Hard功率级集成了带电源开关的高速门驱动电路，以在小型封装中提供完整的功率级。这些设备是高速DC-DC转换、同步整流和多相电机驱动的理想选择。

自2019年1月以来，数千个EPC Space抗辐照型GaN器件已进入轨道。

产品型号	描述	产品封装 (mm)
FBS-GAM01P-C-PSE	Single Output High-Speed eGaN® HEMT Gate Driver Development Module	12.7 x 9.5
FBS-GAM01P-R-PSE	Radiation-Hardened Single Output High-Speed eGaN® HEMT Gate Driver Module	12.7 x 9.5
FBS-GAM02P-C-PSE	50 V Multifunction Power eGaN® HEMT Gate Driver Development Module	25 x 19
FBS-GAM02P-R-PSE	50 V Radiation-Hardened Multifunction Power eGaN® HEMT Gate Driver Driver Module	25 x 19
FBS-GAM01-P-C50	50 V/12 A Single Low-Side Power Driver Development Module	19 x 9.7
FBS-GAM01-P-R50	50 V/12 A Radiation-Hardened Single Low-Side Power Driver Module	19 x 9.7
FBS-GAM01-P-C100	100 V/12 A Single Low-Side Power Driver Development Module	19 x 9.7
FBS-GAM01-P-R100	100 V/12 A Radiation-Hardened Single Low-Side Power Driver Module	19 x 9.7
FBS-GAM02-P-C50	50 V/ 10 A Multifunction Power Development Module	25 x 19
FBS-GAM02-P-R50	50 V/10 A Radiation-Hardened Multifunction Power Module	25 x 19
FBS-GAM04-P-C50	50 V/10 A Dual Low-Side Power Driver Development Module	25 x 19
FBS-GAM04-P-C100	100 V/10 A Dual Low-Side Power Driver Development Module	25 x 19