EPC Space Rad Hard GaN Drivers are optimized to drive Rad Hard GaN transistors in critical spaceborne systems. Rad Hard Power Stages integrate a high-speed gate drive circuit with power switches to provide a complete power stage in a small package. These devices are ideal for high speed DC-DC conversion, synchronous rectification, and multi-phase motor drives.
Flight Heritage: Thousands of EPC Space Rad Hard GaN devices have been in orbit since January of 2019
Part Number | Description | Package Size (mm) |
---|---|---|
FBS-GAM01P-C-PSE | Single Output High-Speed eGaN® HEMT Gate Driver Development Module | 12.7 x 9.5 |
FBS-GAM01P-R-PSE | Radiation-Hardened Single Output High-Speed eGaN® HEMT Gate Driver Module | 12.7 x 9.5 |
FBS-GAM02P-C-PSE | 50 V Multifunction Power eGaN® HEMT Gate Driver Development Module | 25 x 19 |
FBS-GAM02P-R-PSE | 50 V Radiation-Hardened Multifunction Power eGaN® HEMT Gate Driver Driver Module | 25 x 19 |
FBS-GAM01-P-C50 | 50 V/12 A Single Low-Side Power Driver Development Module | 19 x 9.7 |
FBS-GAM01-P-R50 | 50 V/12 A Radiation-Hardened Single Low-Side Power Driver Module | 19 x 9.7 |
FBS-GAM01-P-C100 | 100 V/12 A Single Low-Side Power Driver Development Module | 19 x 9.7 |
FBS-GAM01-P-R100 | 100 V/12 A Radiation-Hardened Single Low-Side Power Driver Module | 19 x 9.7 |
FBS-GAM02-P-C50 | 50 V/ 10 A Multifunction Power Development Module | 25 x 19 |
FBS-GAM02-P-R50 | 50 V/10 A Radiation-Hardened Multifunction Power Module | 25 x 19 |
FBS-GAM04-P-C50 | 50 V/10 A Dual Low-Side Power Driver Development Module | 25 x 19 |
FBS-GAM04-P-C100 | 100 V/10 A Dual Low-Side Power Driver Development Module | 25 x 19 |
Single ground-referenced or floating eGaN HEMT gate driver for any discrete HEMT in the EPC Space portfolio
Capable of driving multiple, paralleled GaN HEMTs
Internal gate driver VBIAS power supply over-voltage clamp for added protection
Integrated UVLO/Power Good detection and reporting circuitry
Power Good/(low-true) Shutdown bidirectional I/O feature
3.3 V compatible logic input
9 pin, low-profile over-molded SMT package with unique “pillar” I/O pads
Package dimensions: 0.50″L x 0.38″W x 0.125″H
“Gan-Driving-GaN” technology
High speed
Parts are fully qualified per EPC Space stringent qualification requirements.