Rad Hard GaN Packaged Discretes
Rad Hard GaN Packaged Discretes
Rad Hard GaN Die on Ceramic Adaptor
Rad Hard GaN Die on Ceramic Adaptor
Rad Hard GaN Drivers and Power Stages
Rad Hard GaN Drivers and Power Stages
Demonstration Boards
Demonstration Boards
Rad Hard GaN Packaged Discretes

EPC Space Rad Hard GaN discrete devices have been specifically designed for critical applications in the high reliability or commercial satellite space environments. These devices have exceptionally high electron mobility and a low temperature coefficient resulting in very low R values. The lateral structure of the die provides for very low gate charge (QG) and extremely fast switching times. These features enable higher power densities, higher efficiencies and more compact and lighter packaging.


Flight Heritage: Thousands of EPC Space Rad Hard GaN devices have been in orbit since January of 2019


Part NumberVoltage (V)ID (A)Max RDS(on) (mΩ)Max QG (nC)Package Size (mm)
FBG04N08A408282.83.4 x 3.4
FBG04N30B40308.511.45.7 x 3.9
EPC7019G40954228.0 x 5.6
EPC7014UB601580184 (pC)3.25 x 2.74
FBG10N30B1003012115.7 x 3.9
FBG10N05A1005452.23.4 x 3.4
FBG20N04A200413033.4 x 3.4
FBG20N18B200182875.7 x 3.9
FBG30N04C30044002.64.4 x 4.4

  • Low RDS(ON)

  • Ultra-low QG for High Efficiency

  • Logic Level

  • Light Weight – 0.068 grams

  • New Compact Hermetic Package

  • Source Sense Pin

  • Total Dose

    • Rated to 300 krad

  • Single Event

    • SEE immunity for LET of  83.7 MeV/mg/cm2 with VDS up to 100% of rated Breakdown

  • Low Dose Rate at 100 mRad/sec

    • Maintains Pre-Rad specification

  • Neutron

    • Maintains Pre-Rad specification for up to 1 x 1015 Neutrons/cm2


Parts are fully qualified per EPC Space stringent qualification requirements. 


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